2015年刊物论文
1．Complete 3D-Reduced Surface Field Superjunction Lateral Double-Diffused MOSFET Breaking Silicon Limit
IEEE ELECTRON DEVICE LETTERS, Vol,36, No.12, pp: 1348-1350,2015.Baoxing Duan, Zhen Cao, Song Yuan, and Yintang Yang
2．A step-by-step experiment of 3C-SiC hetero-epitaxial growth on4H-SiC by CVD Applied
Surface Science, Vol.357, pp:985~993,2015.Bin Xin, Ren-Xu Jia, Ji-Chao Hu, Cheng-Ying Tsai, Hao-Hsiung Lin,Yu-Ming Zhang
3．An Improved ICP Etching for Mesa-Terminated 4H-SiC p-i-n Diodes
IEEE Transactions on Electron Devices, Vol. 62,No. 4, pp:1223-1229,2015.Han Chao, Zhang Yuming, Song Qingwen, Zhang Yimen, Tang Xiaoyan, Yang Fei, Niu Yingxi
4．Flexible ITO-free Organic Solar Cells Based on MoO3/Ag Anodes
IEEE Photonics Journal, Vol. 7, No. 1, 8400109,2015.Zhizhe Wang, Chunfu Zhang, Dazheng Chen, Shi Tang,Jincheng Zhang, Ying Wang, Genquan Han, Shengrui Xu, and Yue Hao
5．Novel silicon allotropes: Stability, mechanical, and electronic properties
Journal of Applied Physics, Vol.118, No.18, pp:185704(9) ,2015. Fan Qingyang, Chai Changchun, Wei Qun, Yan Haiyan, Zhao Yingbo, Yang Yintang, Yu Xinhai, Liu Yang, Xing Mengjiang, Zhang Junqin
6．Mechanical and electronic properties of Ca1-xMgxO alloys
Materials Science in Semiconductor Processing, Vol,40, No.1, pp:676-684,2015.Fan Qingyang, Chai Changchun, Wei Qun, Yang Yintang, Qiao Liping, Zhao Yingbo, Zhou Peikun, Xing Mengjiang, Zhang Junqin, Yao Ronghui
7．Structural, mechanical, and electronic properties of P3m1-BCN
Journal of Physics and Chemistry of Solids, Vol.79,No.1, pp:89-96,2015.Fan Qingyang, Wei Qun, Chai Changchun, Yan Haiyan, Zhang Meiguang, Lin Zhengzhe, Zhang Zixia, Zhang Junqin, Zhang Dongyun
8．An Analytical Model of Thermal Mechanical Stress Induced by Through Siliocn Via
Chinese Physics B, Vol.24,No.5,pp:056601-1-8,2015.Dong Gang,Shi Tao,Zhao Ying-Bo,Yang Yin-Tang
9．Simulation and experimental study of high power microwave damage effect on AlGaAs/InGaAs pseudomorphic high electron mobility transistor
Chinese Physics B, Vol.24,No.4, pp:048502(5) ,2015.Yu Xinhai, Chai Changchun, Liu Yang, Yang Yintang, Xi xiaowen
10．Non-ideal effect in 4H SiC bipolar junction transistor with double Gaussian-doped base
Chinese Physics B, Vol. 24, No. 6, pp.068502-1~068502-5,2015. Yuan Lei, Zhang Yu-Ming, Song Qing-Wen, Tang Xiao-Yan, and Zhang Yi-Men
11．Low specific contact resistance on epitaxial p-type 4H-SiC with a step-bunching surface
Chinese Physics B, Vol. 24, No. 11,pp:117304-1~ 8,2015.Han Chao,Zhang YuMing,Song QingWen,Tang XiaoYan, Zhang Yi-Men,Guo Hui,Wang Yue-Hu
12．Interfacial and electrical characteristics of a HfO2/n-InAlAs MOS-capacitor with different dielectric thicknesses
Chinese Physics B2015.Vol.24, No.12, pp. 126701-1~5 Guan He, Lv Hong-Liang, Guo Hui, Zhang Yi-Men, Zhang Yu-Ming, Wu Li-Fan
13．Analytical models of on-resistance and breakdown voltage for 4H-SiC floating junction Schottky barrier diodes
Solid-State Electronics, Vol. 103, pp: 83-89,2015.Yuan Hao, Tang Xiaoyan, Song Qingwen, Zhang Yimen, Zhang Yuming,Yang Fei,Niu Yingxi
14．Investigation of proton irradiation effects on InP/InGaAs double heterojunction bipolar transistors
Solid-State Electronics, Vol.109,pp:52-57,2015.Liu Min, Zhang Yuming, Lu Hongliang, Zhang Yimen, Zhang Jincan, Ren Xiaotang
15．Improved modeling on the RF behavior of InAs/AlSb HEMTs
Solid-State Electronics, Vol.114, pp:155-162,2015.Guan He, Lv Hongliang, Zhang Yuming, Zhang Yimen
16．Analysis of high power microwave induced degradation and damage effects in AlGaAs/InGaAs pHEMTs
Microelectronics Reliability, Vol.55,No.8, pp:1174-1179,2015.Yu Xinhai, Chai Changchun, Liu Yang, Yang Yintang, Fan Qingyang
17．Scattering Mechanism of Electron in (001)、(101) Biaxially-Strained Si and Si1-xGexMaterials
Journal of Computational and Theoretical Nanoscience (CTN), 12(8):1610-1614,2015.白敏，宣荣喜，宋建军、张鹤鸣、胡辉勇、舒斌
18．Proton-Induced Degradation of InP/InGaAs HBTs Predicted by Nonionizing Energy Loss Model
IEEE Trans on Nuclear Science, Vol. 62, No. 3, pp:1336-1340,2015.C. H. Li, H. L. Lu , Y. M. Zhang, M. Liu,
and X. H. Zhao
19．Influence of three-dimensional p-buried layer pattern on the performance of 4H-SiC floating junction Schottky barrier diode
Japanese Journal of Applied Physics,Vol.54, No.10, pp:100302,2015.Yang Shuai,Zhang Yuming, Song Qingwen, Tang Xiaoyan, Zhang Yimen, Huo Tianjia, Liu Sicheng, Yuan Hao
20．Interfacial and electrical characterization of HfO2/Al2O3/InAlAs structures
Japanese Journal of Applied Physics, Vol.54, No.11, pp:110303,2015. Wu Li-Fan, Zhang Yu-Ming, Lu Hong-Liang, Zhang Yi-Men
21．Low ohmic-contact resistance in AlGaN_ GaN high electron mobility transistors with holes etching in ohmic region
ELECTRONICS LETTERS, Vol. 51,No. 25 pp. 2145–2147,2015.Chong. Wang, Y. L. He, X. F. Zheng,M. D. Zhao, M. H. Mi, X. D. Li,W Mao, X. H. Ma and Y. Hao
22．Modeling and understanding of the frequency dependent HPM upset susceptibility of the CMOS inverter Science
China-Information Sciences, Vol.58,No.8, pp:082402(11) ,2015.Yu XinHai, Chai ChangChun, Liu Yang,YangYinTang
23．阶梯氧化层新型折叠硅横向双扩散功率器件
物理学报, Vol.64,No.6, pp:067304(1-6) ,2015.段宝兴 李春来 马剑冲 袁嵩 杨银堂
24．具有P型覆盖层新型超级结横向双扩散功率器件
物理学报, Vol.64,No.16, pp:167304(1-7) ,2015.李春来 段宝兴 马剑冲 袁嵩 杨银堂
25．具有半绝缘多晶硅完全三维超结横向功率器件
物理学报, Vol.64,No.18, pp:187303(1-7) ,2015.曹震 段宝兴 袁小宁 杨银堂
26．单轴应变Si NMOSFET电容特性模型
物理学报, 64(6),pp:067305,2015. 吕懿、张鹤鸣、胡辉勇、杨晋勇、殷树娟、周春宇
27．Si/Ge/Si异质横向SPiN二极管固态等离子体解析模型
物理学报, 64(23),pp:238501,2015.康海燕、胡辉勇、王斌、宣荣喜、宋建军、赵晨栋、许小仓
28．单轴应变Si NMOSFET源漏电流特性模型
物理学报, 64(19),pp:197301,2015.吕懿、张鹤鸣、胡辉勇、杨晋勇、殷树娟、周春宇，
29．氮化硅膜致小尺寸金属氧化物半导体晶体管沟道单轴应变物理机制
物理学报, 64(23),pp:238502,2015.杨旻昱、宋建军、张静、唐召唤、张鹤鸣、胡辉勇
30．压应变 Ge/(001)Si1-xGex空穴散射与迁移率模型
物理学报, 64(3),pp:038501,2015. 白敏，宣荣喜，宋建军、张鹤鸣、胡辉勇、舒斌
31．多个硅通孔引起的热应力对迁移率和阻止区的影响
物理学报, Vol.64,No17,pp:176601-1-8,2015.董刚, 刘荡, 石涛, 杨银堂
32．三维集成电路堆叠硅通孔动态功耗优化
物理学报, Vol.64,No.2,pp:026601-1-7,2015.董刚，武文珊，杨银堂
33．A CMOS transimpedance amplifier with high gain and wide dynamic range for optical fiber sensing system
OPTIK: International Journal for Light and Electron Optics, Vol,126, No.15-16, pp:1389-1393,2015.Lianxi Liu, Jiao Zou, Ning Ma, Zhangming Zhu, Yintang Yang
34．3rd-Order active-RC complex filter with automatic frequency tuning for ZigBee transceiver applications
J. Cent. South Univ, Vol.22, No.3, pp:966-973,2015.LI Di, JING Zhan, YANG Yin- tang, WU Xiao-feng
35．First-principles Theoretical Study on Band of Strained Wurtzite Nb-doped ZnO
Journal of Wuhan University of Technology-Materials Science Edition, Vol.30,No.3, pp:467-472, 2015.Qiao Liping, Chai Changchun, Yang Yintang, Yu Xinhai, Shi Chunlei
36．Analysis and Evaluation of Coupling between Adjacent TSVs with Considering the Discharging Path
IEICE Electronics Express, Vol.12,No.5,pp:1-7,2015.Yingbo Zhao, Gang Dong, Yintang Yang, Junping Zheng
37．Electrical analysis of TSV step change in radius with compensation structure
IEICE Electronics Express, Vol.12,No.12,pp:1-7,2015. Junping Zheng, Gang Dong*, Yintang Yang, Yingbo Zhao, Qingyang Fan
38．Statistical Interconnect Crosstalk Noise Model and Analysis for Process Variations
Chinese Journal of Electronics, Vol.24,No.1,pp:83-87,2015.Li Jianwei,Dong Gang,Wang Zeng,Ye Xiaochun
39．A Low-Jitter Fast-Locking Multi-phase Clock for High Resolution CCD Processor
IETE Journal of Research, Vol.61, No.3, pp:213-222,2015.Lianxi Liu, Ning Ma, Yang Zhao, Wei Guo, Shubin Liu and Zhangming Zhu
40．Highly ordered core–shell CoFe2O4–BiFeO3 nanocomposite arrays from dimension confined phase separation and their interfacial magnetoelectric coupling properties
RSC Advances, 5, 58640–58643,2015.X. L. Lu，J. W. Zhang, C. F. Zhang, J. C. Zhang and Y. Hao
41．Through space charge-transfer emission in lambda (Λ)-shaped triarylboranes and the use in fluorescent sensing for fluoride and cyanide ions
RSC Advances, 5(57):45668-456782015.He Xi, Yang Liu,Chun-Xue Yuan,Ye-Xin Li,, Lei Wang,,Xu-Tang Tao,Xiao-Hua Ma,Chun-Fu Zhang,Yue Hao
42．Ultrathin barrier AlN/GaN high electron mobility transistors grown at a dramatically reduced growth temperature by pulsed metal organic chemical vapor deposition
Applied Physics letters, Vol.107,No.4, PP043503,2015.JunShuai Xue, JinCheng Zhang, Yue Hao
43．Effects of interlayer growth condition on the transport properties of heterostructures with InGaN channel grown on sapphire by metal organic chemical vapor deposition
Applied Physics Letters,106, 152101,2015.Yachao Zhang, Xiaowei Zhou, Shengrui Xu, Zhizhe Wang, Yi Zhao, Jinfeng Zhang, Dazheng Chen, Jincheng Zhang, and Yue Hao
44．Trap states in enhancement-mode double heterostructures AlGaN/GaN high electron mobility transistors with different GaN channel layer thicknesses
Applied Physics Letters, 107(6), 063501,2015.Yunlong He, Peixian Li, Chong Wang, Xiangdong Li,Shenglei Zhao, Minhan Mi, Jiuqing Pei, Jincheng Zhang, Xiaohua Ma,Yue Hao
45．Silicon diffusion control in atomic-layer-deposited Al2O3/La2O3/Al2O3 gate stacks using an Al2O3 barrier layer
Nanoscale Research Letters, 10:141,2015.Xing Wang, Hongxia Liu, Chenxi Fei，Yinshu Ying and Xiaojiao Fan
46．The influence of process parameters and pulse ratio of precursors on the characteristics of La1 − x Al x O3 films deposited by atomic layer deposition
Nanoscale Research Letters, 10:180,2015.Chenxi Fei, Hongxia Liu*, Xing Wang and Xiaojiao Fan
47．New Superjunction LDMOS Breaking Silicon Limit by Electric Field Modulation of Buffered Step Doping
IEEE ELECTRON DEVICE LETTERS, Vol,36, No.1, pp: 47-49,2015.Baoxing Duan, Zhen Cao, Xaoning Yuan, Song Yuan, and Yintang Yang
48．The properties of gallium oxide thin film grown by pulsed laser deposition
Applied Surface Science, Vol.359, pp:847,2015. Feng Qian,Li Fuguo,Dai Bo,Jia Zhitai,Xie Wenlin,Xu Tong,Lu Xiaoli,Tao Xutang,Zhang Jincheng,Hao Yue
49．Electrical and optical properties of layer-stacked graphene transparent electrodes using self-supporting transfer method
SYNTHETIC METALS, Vol.203,No. ,pp: 215-220,2015.Ning, J ; Wang, D; Zhang, CF; Wang, ZZ ; Tang, S; Chen, DZ; Shi, YG; Zhang, JC; Hao, Y
50．Impact of charged basal stacking faults on the mobility of two-dimensional electron gas in nonpolar a-plane AlGaN/GaN heterostructures
Semiconductor Science and Technology,30(8): 085007,2015.Jinfeng Zhang, Ran Yan, Guipeng Liu, Haonan Liu, Bei An, Yuhu Nie and Yue Hao
51．A novel 4H-SiC MESFET with clival gate
SUPERLATTICES AND MICROSTRUCTURES,83,29-34,2015. Jia Hujun，Xing Ding，Zhang Hang，Pei Xiaoyan，Sun Zhelin，Yuan Yingchun
52．A novel 4H-SiC MESFET with ultrahigh upper gate
SUPERLATTICES AND MICROSTRUCTURES, 86,372-378,2015.Hujun Jia, Hang Zhang, Ding Xing, Yehui Luo and Baoxing Duan
53．Improved performance of 4H-SiC MESFETs with Gamma-gate and recessed p-buffer layer
SUPERLATTICES AND MICROSTRUCTURES, 85,551-556,2015.Hujun Jia, Hang Zhang, Ding Xing and Peimiao Ma
54．Alloy disorder scattering limited mobility of two-dimensional electron gas in the quaternary AlInGaN/GaN heterojunctions
Physica E, 67(1): 77-83 ,2015. Yao Li,Jinfeng Zhang*, Wei Wan,Yachao Zhang,Yuhu Nie,Jincheng Zhang,Yue Hao
55．Improved multi-recessed 4H-SiC MESFETs with double-recessed p-buffer layer
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 40,650-654,2015.Hujun Jia, Hang Zhang, Yehui Luo and Zhihui Yang
56．RF characteristics for 4H-SiC MESFET with a clival gate
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 40,777-780,2015. Jia Hujun，Xing Ding，Zhang Hang，Yuan Yingchun，Ma Peimiao，Luo Yehui
57．Improved performance of 4H-silicon carbide metal semiconductor field effect transistors with multi-recessed source/drain drift regions
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,31,240-244,2015.Hujun Jia，Peimiao Ma，Zhelin Sun，Hang Zhang
58．Observation of Optical Properties of Neodymium Oxide with Spectroscopic Ellipsometry
Journal of Electronic Materails,Vol.44,No.8,2592-2597,2015,Fan, Xiaojiao; Liu, Hongxia; Fei, Chenxi etal
59．Optical characteristics of H2O-based and O3-based HfO2 films deposited by ALD using spectroscopy ellipsometry.
Applied Physics A, 119(3): 957-963,2015.Xiaojiao Fan, Hongxia Liu, Bo Zhong
60．Influence of the anisotropy on the performance of D-band SiC IMPATT diodes
Applied Physics A,Vol.118, No.4,pp.1219-1227, 2015.Qing Chen,Lin’an Yang,Shulong Wang,Yue Zhang,Yang Dai,Yue Hao
61．Comprehensive nucleation mechanisms of quasi-monolayer graphene grown on Cu by chemical vapor deposition
JOURNAL OF CRYSTAL GROWTH,Vol.4,No. 24,pp: 55-61,2015.Ning, J ; Wang, D ; Han, D; Shi, YG; Cai, WW; Zhang, JC; Hao, Y
62．Synthesis of Multi layer Graphene Films on Copper by Modified Chemical Vapor Deposition
MATERIALS AND MANUFACTURING PROCESSES, Vol.30,No.6,pp: 711-716,2015.Shi, YG ; Wang, D; Zhang, JC ; Zhang, P ; Shi, XF; Hao, Y
63．Stability of inverted organic solar cells with low-temperature ZnO buffer layer processed from aqueous solution
Phys. Status Solidi A, Vol. , No. 10, 2262–2270,2015.Dazheng Chen, Chunfu Zhang*, Wei Wei, Zhizhe Wang, Ting Heng, Shi Tang, Genquan Han,Jincheng Zhang, and Yue Hao
64．Influence of compressive strain on the incorporation of indium in InGaN and InAlN ternary alloys
CHINESE PHYSICS B,Vol. 24, No. 1,2015.Zhao Yi, Zhang Jin-Cheng, Xue Jun-Shuai,Zhou Xiao-Wei, Xu Sheng-Rui, and Hao Yue
65．Trap states induced by reactive ion etching in AlGaN/GaN high-electron-mobility transistors
CHINESE PHYSICS B, 24(11)117305,2015.Luo Jun , Zhao Sheng-Lei , Mi Min-Han , Hou Bin ,Yang Xiao-Lei, Zhang Jin-Cheng, Ma Xiao-Hua, Hao Yue
66．Degradation mechanism of enhancement-mode AlGaN/GaN HEMTs using fluorine ion implantation under the on-state gate overdrive stress
CHINESE PHYSICS B, 24(1)0173032015. Sun Wei-Wei , Zheng Xue-Feng , Fan Shuang , Wang Chong ,Du Ming , Zhang Kai , Chen Wei-Wei , Cao Yan-Rong ,Mao Wei , Ma Xiao-Hua , Zhang Jin-Cheng,Hao Yue
67．Influence of the gate edge on the reverse leakage current of AlGaN/GaN HEMTs
AIP ADVANCES,5, 097154,2015. YongHe Chen, XiaoHua Ma, WeiWei Chen, Bin Hou, JinCheng Zhang, and Yue Hao
68．Relaxed germanium-tin P-channel tunneling field-effect transistors fabricated on Si: impacts of Sn composition and uniaxial tensile strain
AIP Advances,Vol. 5, No. 5, 057145,2015. Genquan Han, Yibo Wang, Yan Liu, Hongjuan Wang, Mingshan Liu, Chunfu Zhang, Jincheng Zhang, Buwen Cheng, and Yue Hao
69．Transport mechanism of reverse surface leakage current in AlGaN/GaN high-electron mobility transistor with SiN passivation
Chinese Physics B, Vol.24(2),pp: 027302-1,2015.Zheng Xuefeng, Fan Shuang, Chen Yonghe, Kang Di, Zhang Jiankun, Wang Chong, Mo Jianghui, Li Liang, Ma Xiaohua, Zhang Jincheng, Hao Yue
70．Degradation mechanism of enhancement-mode AlGaN/GaN HEMTs using fluorine ion implantation under the on-state gate overdrive stress
Chinese Physics B, Vol.24(1), pp:017303-1,2015.Sun Wei-wei, Zheng Xue-feng, Fan Shuang, Wang Chong, Du Ming, Zhang Kai, Chen Wei-wei, Cao Yan-rong, Mao Wei, Ma Xiao-hua, Zhang Jin-cheng, Hao Yue
71．Yield-Based Capability Index for Evaluating the Performance of Multivariate Manufacturing Process
Quality and Reliability Engineering International, Vol. 31,No. 3, pp: 419–430,2015. Kai Gu, Xinzhang Jia, Hongwei Liu，and Hailong You
72．Efficient planar heterojunction solar cell employing CH3NH3PbI2+xCl1+x mixed halide perovskite 0utilizing modified sequential deposition
Japanese Journal of Applied Physics,Vol. 54, No. 9, pp:0923012015. Chunfu Zhang, Shi Tang, Jing Yan, Zhizhe Wang, He Xi, Dazheng Chen, Haifeng Yang, Jincheng Zhang, Genquan Han, Yan Liu, and Yue Hao
73．Efficient inverted polymer solar cells using low-temperature zinc oxide interlayer processed from aqueous solution
Japanese Journal of Applied Physics, Vol. 54, No. 4, pp. 042301,2015. Dazheng Chen, Chunfu Zhang, Ting Heng, Wei Wei, Zhizhe Wang,Genquan Han, Qian Feng, Yue Hao, and Jincheng Zhang
74．Characterization of Interface Charge in NbAlO/AlGaN/GaN MOSHEMT with Different NbAlO Thicknesses
InAlN/GaN/InAlN/GaN double-channel high electron mobility transistors
Chinese Physics Letters, Vol.32,No.1,pp:17301,2015. Feng Qian,Du Kai,Dai Bo,Dong Liang,Feng Qing
75．Morphological and Microstructural Evolution and Related Impurity Incorporation in Non-Polar a-Plane GaN Grown on r-Sapphire Substrates
CHINESE PHYSICS LETTERS, Vol.32, No.9, 2015.Jiang Ren-Yuan; Xu Sheng-Rui ; Zhang Jin-Cheng ; Jiang, Jiang Teng ; Jiang Hai-Qing; Wang Zhi-Zhe ; Fan Yong-Xiang ; Hao Yue
76．Growth of a-Plane GaN Films on r-Plane Sapphire by Combining Metal Organic Vapor Phase Epitaxy with the Hydride Vapor Phase Epitaxy
CHINESE PHYSICS LETTERS,Vol.32, No.8,2015. Jiang Teng;Xu Sheng-Rui; Zhang Jin-Cheng ; Lin Zhi-Yu; Jiang Ren-Yuan; Hao Yue
77．Al0.30Ga0.70N/GaN/Al0.07Ga0.93N Double Heterostructure High Electron Mobility Transistors with a Record Saturation Drain Current of 1050mA/mm
Chinese Physics Letters, Vol. 32, No. 11, 117202,2015.LI Xiang-Dong, ZHANG Jin-Cheng, GUO Zhen-Xing, JIANG Hai-Qing, ZOU Yu, ZHANG Wei-Hang, HE Yun-Long, JIANG Ren-Yuan,ZHAO Sheng-Lei, HAO Yue
78．AlGaN Channel High Electron Mobility Transistors with an AlxGa1-xN/GaN Composite Buffer Layer
Chinese Physics Letters, 32(7): 077205,2015.LI Xiang-Dong, ZHANG Jin-Cheng, Zou Yu, MA Xue-Zhi, LIU Chang, ZHANG Wei-Hang, WEN Hui-Juan, HAO Yue
79．Effects of the flow rate of hydrogen on the growth of graphene
NTERNATIONAL JOURNAL OF MINERALS METALLURGY AND MATERIALS,Vol.22,No. 1,pp:102-110, 2015. Shi, YG; Hao, Y ; Wang, D ; Zhang, JC ; Zhang, P; Shi, XF ; Han, D ; Chai, Z; Yan, JD
80．AlGaN channel MIS-HEMTs with a very high breakdown electric field and excellent high-temperature performance
IEICE Electronics Express, 12(20): 1-7, 2015.Xiangdong Li, Weihang Zhang, Mengdi Fu, Jincheng Zhang,Haiqing Jiang, Zhenxing Guo, Yu Zou, Renyuan Jiang, Zuochen Shi, and Yue Hao
81．A 5–8 GHz wideband 100 W internally matched GaN power amplifier
IEICE Electronics Express,12(6): 20150172.Bochao Zhao, Xiaohua Ma, Yang Lu, Jiaxin Zheng, Wenzhe Han, Honghe Zhang, Yanlong Zhang, Yue Hao
